Method of fabricating semiconductor device having alignment...

Details Method of fabricating semiconductor device having alignment... Method of fabricating semiconductor device having alignment...

2005-01-11

2005-01-11

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S462000, C257S797000

Reexamination Certificate

active

06841451

ABSTRACT:
A method of fabricating a semiconductor device capable of remarkably reducing the quantity of misalignment after an etching step is obtained. This method of fabricating a semiconductor device comprises a first lithography step of transferring a mask pattern onto a first semiconductor substrate as a first resist pattern with positional reference to a first alignment mark, a first etching step of performing etching through the first resist pattern serving as a mask, a step of measuring the quantity of misalignment after the first etching step and a second lithography step of thereafter transferring the mask pattern onto a second semiconductor substrate as a second resist pattern while correcting the positional reference based on the first alignment mark on the basis of the quantity of misalignment after the first etching step. Thus, the positional reference in the second lithography step can be previously corrected to eliminate the quantity of misalignment after the etching step, whereby the quantity of misalignment after the second etching step is remarkably reduced.

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