Method of fabricating semiconductor device by bonding together s

Details Method of fabricating semiconductor device by bonding together s Method of fabricating semiconductor device by bonding together s

1979-04-20

1981-01-27

Massie, Jerome W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 148187, 156629, 156647, 156662, 357 65, 357 71, H01L 2122, H01L 2128, H01L 21306

Patent

active

042466938

ABSTRACT:
There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrate and electrodes and the like members are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD. When cooling after the bonding, a temperature gradient is established so that temperature in the silicon substrate is higher than a temperature in the molten aluminum so that the forward voltage drop FVD can be decreased further.

REFERENCES:
patent: 2916806 (1959-12-01), Pudvin
patent: 3450958 (1969-06-01), Saxena
patent: 3665594 (1972-05-01), Raithel
patent: 3702787 (1972-11-01), Lowry et al.
patent: 4137123 (1979-01-01), Bailey et al.
patent: 4147564 (1979-04-01), Magee et al.
Roberts et al., "The Controlling Factors . . . Technology", Journal of Material Science, 3 (1968) pp. 110-119.
Matlow et al., "Ohmic . . . Contact", Journal of Applied Physics, vol. 30, No. 4 (4/59), pp. 541-543.
Roberts et al., "The Effects of . . . Devices", Journal of Material Science, 6 (1971), pp. 189-199.

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