Method of fabricating semiconductor device, and plating...

Details Method of fabricating semiconductor device, and plating... Method of fabricating semiconductor device, and plating...

2007-07-27

2011-10-18

Van, Luan (Department: 1724)

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Involving measuring, analyzing, or testing

Reexamination Certificate

active

08038864

ABSTRACT:
A method of fabricating a semiconductor device of the invention includes a plating process of filling a plurality of recesses provided to an insulating film formed on a substrate with an electro-conductive material, wherein the plating process includes a process step (S104) of performing the plating with a first current density which was obtained by correcting a predetermined first reference current density based on ratio of surface area Sr=S1/S2of a first surface area S1over the entire surface of the substrate which includes the area of side walls of the plurality of recesses over the entire surface of the semiconductor substrate, and a second surface area S2over the entire surface of the substrate which does not include the area of side walls of the plurality of recesses, when fine recesses not larger than a predetermined width, out of all of the plurality of recesses, are filled with the electro-conductive material.

REFERENCES:
patent: 6140241 (2000-10-01), Shue et al.
patent: 6319831 (2001-11-01), Tsai et al.
patent: 7189318 (2007-03-01), Wilson et al.
patent: 7232513 (2007-06-01), Webb et al.
patent: 2004/0262165 (2004-12-01), Kanda et al.
patent: 2001123298 (2001-05-01), None
patent: 2004270028 (2004-09-01), None
patent: 2005039142 (2005-02-01), None
patent: 2005264271 (2005-09-01), None
patent: 2006060011 (2006-03-01), None

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device, and plating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, and plating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device, and plating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4261624