Method of fabricating semiconductor device and method of fabrica

Details Method of fabricating semiconductor device and method of fabrica Method of fabricating semiconductor device and method of fabrica

1995-11-16

1998-06-23

Dang, Trung

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438172, 438576, 438589, 216 83, H01L 21302

Patent

active

057705259

ABSTRACT:
A superlattice buffer layer, an AlGaAs layer, an InGaAs layer, an AlGaAs layer, and an N+GaAs layer are successively deposited on a GaAs layer by epitaxial growth. Using an electron-beam resist as a mask, a patterning layer in the form of an SiO2 film is formed on the N+GaAs layer. Then, only the N+GaAs layer is selectively etched through an opening in the electron-beam resist with a water-diluted etchant which comprises a mixture of ammonia water and hydrogen peroxide solution which are mixed at a ratio of at least 1:4000, thereby forming a recess in the N+GaAs layer. Using the electron-beam resist also as a mask, a gate metal member serving as the base end of a T-shaped gate electrode is deposited on the AlGaAs layer in the recess. The width of an opening in the electron-beam resist determines the gate length.

REFERENCES:
patent: 5279704 (1994-01-01), Saito
patent: 5362683 (1994-11-01), Takenaka et al.

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