Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1976-08-13

1978-02-14

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29588, 204192E, 357 49, B01J 1700

Patent

active

040730549

ABSTRACT:
An improved method for forming an isolation region of electrical insulator between elements of a semiconductor device, comprising depositing an electrical insulator at a low temperature to cover one major surface of a semiconductor substrate and to fill a groove provided in this surface of the semiconductor substrate, coating the electrical insulator layer with another electrical insulator which is etched at a rate approximately equivalent to that of the former electrical insulator, so as to make the entire top surface of the electrical insulator layer parallel to the major surface of the substrate, and then applying physical etching using ions to remove the electrical insulator layers until the surface of the substrate is exposed, whereby to provide in the groove an isolation region having a satisfactory surface flatness.

REFERENCES:
patent: 3400309 (1968-09-01), Doo
patent: 3892608 (1975-07-01), Kuhn
patent: 3998673 (1976-12-01), Chow
IBM Technical Disclosure Bulletin, "Double Poly-Silicon Isolation for IC", by Doo, vol. 8, No. 5, Oct. 1965, pp. 802 and 803.

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