Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1997-01-27

1999-08-31

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438514, 438526, H01L 21322

Patent

active

059465859

ABSTRACT:
There is disclosed a method of fabricating a semiconductor device having excellent characteristics. The device comprises a substrate having an insulating surface. A hydrogen-rich region is formed inside the substrate by ion doping. Thermal processing is performed at 300 to 450.degree. C. to thermally diffuse hydrogen ions. Thus, dangling bonds and defect levels in an active layer are compensated. Since the hydrogenation from inside the semiconductor device is enabled in this way, hydrogen termination can be performed at a high efficiency.

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