Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1991-05-06

1992-03-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437190, 437183, 437245, 437246, H01L 2144

Patent

active

050949799

ABSTRACT:
In a method of fabricating a semiconductor device, a conductive thin film is first removed by anisotropic etching through masks of electrodes having fine patterns. Thus, the conductive thin film is prevented from side etching in electrode portions, to thereby prevent electrode separation and V.sub.EBF failure. Then, the electrodes are covered with a resist film, to remove a part of the conductive thin film left on a concave step portion of a non-electrode forming region by isotropic etching. Thus, a problem of shorting across a base and an emitter caused by movement on the basis of separation of the conductive thin film is solved.

REFERENCES:
patent: 3571913 (1971-03-01), Bodway
patent: 4816424 (1989-03-01), Watanabe et al.

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