Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Patent
1998-05-22
1999-05-04
Brown, Peter Toby
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
438618, 438758, 438780, 438781, H01L 2128
Patent
active
058997342
ABSTRACT:
A method of fabricating a semiconductor device having a substrate includes the steps of simultaneously forming an A copolymer having a columnar shape, a B copolymer surrounding the A copolymer, and a C copolymer surrounding the B copolymer on the substrate, removing the A copolymer to form a first hole on the substrate, forming the semiconductor device in the first hole; removing the B copolymer to form a second hole, forming an electrode on the semiconductor device for controlling an electric potential, and removing the C copolymer from the substrate.
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Bloomfield et al. "The Design, Processing, Evaluation and Characterization of Pyroelectric PVDF Copolymer/Silicon Mosfet Detector Arrays" Proceedings of the Ninth IEEE International Symposium, pp. 725-728, 1994.
Lamarre et al. "Double-Layer Process for Wide Gate Recess Etch", IEEE Transactions on Electron Devices, vol. 35, No. 12, pp. 2422-2424, Dec. 1988.
Hong H. Lee, "Fundamentals of Microelectronics Processing", McGraw-Hill Chemical Engineering Series, 1990, title pages and pp. xi-xvi.
Gido et al., "Observation of a Non-Constant Mean Curvature Interface in an ABC Triblock Copolymer", Macromolecules 1993, vol. 26, No. 10, pp. 2636-2640.
Zheng et al., "Morphology of ABC Triblock Copolymers", Macromolecules 1995, vol. 28, No. 21, pp. 7215-7223.
Brown Peter Toby
Guerrero Maria
LG Semicon Co. Ltd.
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