Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1998-03-11

2000-09-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438366, 438481, H01L 21331

Patent

active

06117744&

ABSTRACT:
Disclosed is a method of fabricating a semiconductor device for preventing occurrence of an inconvenience due to exposure of a high melting point metal based material, for example, contamination of a chamber atmosphere due to the metal material upon formation of a semiconductor layer in an opening portion by selective epitaxial growth or upon pre-treatment thereof, to reduce occurrence of crystal defects or the like, thereby forming semiconductor devices at a high yield. The method includes the steps of: forming a conductive layer including a high melting point metal based material on a substrate; forming an opening portion in the conductive layer; covering the high melting point metal based material with a film; and forming a semiconductor layer on a portion of the substrate exposed in the opening portion by epitaxial growth after the step of covering the high melting point metal based material with the film.

REFERENCES:
patent: 5024957 (1991-06-01), Harame et al.
patent: 5773350 (1998-06-01), Herbert et al.

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