Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1988-04-27

1990-04-17

Schor, Kenneth M.

Fishing, trapping, and vermin destroying

437 38, 437 74, 427 38, H01L 21265

Patent

active

049180274

ABSTRACT:
A method of fabricating a semiconductor device comprising a step of forming a trench on a semiconductor substrate, a step of positioning the semiconductor substrate in a first position such that the direction of the ion beams is inclined to a plane which is perpendicular to the principal surface of the semiconductor substrate and which is parallel to a first side-wall of the trench, a step of implanting ions into the first side-wall by emitting ion beams onto the first side-wall of the trench of the semiconductor substrate at the first position, a step of rotating the semiconductor substrate about an axis perpendicular to the principal surface thereof to a second position which is different from the first position, a step of implanting ions into a second side-wall by emitting ion beams onto the second side-wall of the trench of the semiconductor substrate at the second position, a step of rotating the semiconductor substrate about the axis to a third position which is different from the first and second positions, a step of implanting ions into a third side-wall by emitting ion beams onto the third side-wall of the trench of the semiconductor substrate at the third position, a step of rotating the semiconductor substrate about the axis to a fourth position which is different from the first, second and third positions, and a step of implanting ions into a fourth side-wall by emitting ion beams onto the fourth side-wall of the trench of the semiconductor substrate at the fourth position.

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