Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1990-01-19

1991-10-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 74, 437 27, 437 36, H01L 21265

Patent

active

050574442

ABSTRACT:
A method of fabricating a semiconductor device comprising a step of forming a trench selectively on a semiconductor substrate, a step of positioning said semiconductor substrate to a first position inclined to a plane vertical to ion beams, a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the first position, a step of positioning said semiconductor substrate to a second position which is different from the first position by rotating it, and a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the second position.

REFERENCES:
patent: 4653177 (1987-03-01), Lebowitz et al.
patent: 4756793 (1988-07-01), Peek

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