Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2010-03-15

2011-12-06

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31097

Reexamination Certificate

active

08071415

ABSTRACT:
There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the semiconductor substrate for configuring the amplifying element; b) forming a light receiving element region on the semiconductor substrate for forming the plural light receiving elements, with the active region acting as a reference for positioning; c) implanting an impurity into the light receiving element region; d) repeating the process b) and the process c) a number of times that equals a number of diffusion layers in the light receiving element region; e) after implanting the impurity, performing a drive-in process to carry out drive in of the semiconductor substrate; and f) the process e), forming an amplifying element forming process by implanting an impurity in the active region.

REFERENCES:
patent: 6642561 (2003-11-01), Kakumoto et al.
patent: 2008/0108166 (2008-05-01), Park et al.
patent: 2010/0032569 (2010-02-01), Kita
patent: 2006-024787 (2006-01-01), None
patent: 2006-245246 (2006-09-01), None

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