Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2005-01-25
2009-02-03
Smith, Zhandra (Department: 2822)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S458000, C438S459000, C438S464000
Reexamination Certificate
active
07485547
ABSTRACT:
A method of fabricating semiconductor device is described. There is provided a method of fabricating a semiconductor device including, sticking a first protective tape on a first surface of a semiconductor substrate, polishing a second surface of the semiconductor substrate faced to the first surface, sticking a second protective tape on the second surface of the semiconductor substrate, removing the first protective tape, dicing the semiconductor substrate from the first surface side to separate the semiconductor substrate to a plurality of semiconductor chips, sticking a third protective tape on the first surface of a plurality of the semiconductor chips, removing the second protective tape, and etching a cutting surface of the semiconductor chip and the second surface of the semiconductor chip by dry etching.
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Kaji Tetsuya
Shimmei Toshihide
Yamamura Megumi
Duong Khanh B
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Smith Zhandra
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