Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-04-26

2008-05-27

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C438S720000

Reexamination Certificate

active

07378352

ABSTRACT:
After low dielectric constant films are formed on a wiring, hardmasks are formed on the low dielectric constant films. A resistmask is formed on the hardmasks. Via holes are formed in the low dielectric constant films using the resistmask. Ashing the resistmask is performed. During this process, a protection film is formed by sticking a sputtered material generated from the resistmask at least onto side surfaces of the via holes. Thereafter, the via holes are extended to the wiring, and a conductive material is buried into the via holes.

REFERENCES:
patent: 6231777 (2001-05-01), Kofuji et al.
patent: 2003/0054656 (2003-03-01), Soda
patent: 10-284600 (1998-10-01), None
patent: 2000-183040 (2000-06-01), None
patent: 2003-7981 (2003-01-01), None
patent: 2004-119950 (2004-04-01), None

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