Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1995-09-14

1999-10-26

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117933, 438388, 438393, C30B 110

Patent

active

059721057

ABSTRACT:
Thin-film transistors (TFTs) having characteristics comparable to those of a single-crystal silicon wafer are provided. A buffer film made from silicon oxide is formed on a first amorphous silicon film. A nickel acetate solution containing a metal element such as nickel for promoting crystallization of silicon is applied to the first amorphous silicon film. The laminate is heat-treated to form a nickel silicide layer. The nickel silicide layer is then patterned. A second amorphous silicon film is formed and heat-treated to grow crystals. Thus, monodomain regions which can be regarded as single crystals are formed. Active layers of TFTs are formed from these monodomain regions.

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