Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2007-09-11

2007-09-11

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S257000, C257S316000

Reexamination Certificate

active

11163980

ABSTRACT:
A method of fabricating a semiconductor device is provided. Before covering the isolation structures with a conductive layer, a material layer is formed on the isolation structures. The fluid-like material layer allows the material layer formed between the isolation structures to be thicker than that formed on the top of the isolation structures. The isolation structures are then effectively etched back. The material layer at the top of the isolation structures is removed and a portion of isolation structures is also removed to lower the height of the isolation structures.

REFERENCES:
patent: 5998263 (1999-12-01), Sekariapuram et al.
patent: 2004/0106256 (2004-06-01), Dong et al.
patent: 2005/0142765 (2005-06-01), Joo
patent: 2005/0287810 (2005-12-01), Li et al.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3747654