Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2006-10-24

2006-10-24

Kebede, Brooke (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C257SE21097

Reexamination Certificate

active

07125735

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming a step region having a mesa shape in a direction of <011> or <0-11> on a (100) plane of an InP-based compound semiconductor crystal, and burying the step region with InP-based buried layers grown by vapor-phase growth by supplying a base gas to which a chlorinated organic compound is added, the organic chlorine compound including at least two carbon atoms, and each of the carbon atoms is bonded to one chlorine (Cl) atom in one molecule. The chlorinated organic compound is any one of 1,2-dichloroethane, 1,2-dichloropropane, and 1,2-dichloroethylene.

REFERENCES:
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patent: 2002/0119661 (2002-08-01), Watanabe et al.
patent: 01-101624 (1989-04-01), None
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patent: 2002-198616 (2002-07-01), None
T. Takeuchi et al.; “Comparison of chlorocarbons as an additive during MOVPE for flat burying growth of InP” Journal of Crystal Growth, (1997), pp. 611-615, vol. 174. Elsevier.

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