Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2005-03-29

2005-03-29

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S429000, C438S692000, C438S437000

Reexamination Certificate

active

06872632

ABSTRACT:
A method of fabricating a semiconductor device capable of suppressing defective etching in formation of a deep trench also when the number of polishing steps is reduced is obtained. This method of fabricating a semiconductor device comprises steps of forming a first trench on an element isolation region of a semiconductor substrate, forming a first film consisting of an insulator film to fill up the first trench, forming a second trench larger in depth than the first trench in the first trench, forming an embedded film in the second trench and substantially simultaneously polishing an excess depositional portion of the first film and an excess depositional portion of the embedded film.

REFERENCES:
patent: 6399449 (2002-06-01), Matsumoto
patent: 6461934 (2002-10-01), Nishida et al.
patent: 20010036705 (2001-11-01), Nishida et al.
patent: 4-81029 (1992-03-01), None
patent: 5-109880 (1993-04-01), None
patent: 9-8119 (1997-01-01), None
patent: P2000-49296 (2000-02-01), None

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