Method of fabricating semiconductor device

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

205687, 437243, 437248, C25D 1132, C25D 900, H01L 21465

Patent

active

056434359

ABSTRACT:
The present invention encompasses a semiconductor processing device having a processing chamber in which is positioned an electrolyte oxygen pump assembly and tubing for transferring an oxygen containing gas from outside the reaction chamber to within the interior of the electrolyte oxygen pump assembly and tubing for removal of the oxygen depleted gas from within the interior of the electrolyte oxygen pump assembly. In addition, the semiconductor processing tool may further have heating elements for heating a semiconductor substrate within the processing chamber independently from heating of the electrolyte.

REFERENCES:
patent: 3843400 (1974-10-01), Radford et al.
patent: 4267205 (1981-05-01), Pastor et al.
patent: 4474829 (1984-10-01), Peters
patent: 4477541 (1984-10-01), Fraioli
patent: 4522698 (1985-06-01), Maget
patent: 4563240 (1986-01-01), Shibata et al.
patent: 4582657 (1986-04-01), Shibata et al.
patent: 4648955 (1987-03-01), Maget
patent: 4725346 (1988-02-01), Joshi
patent: 4832818 (1989-05-01), Sekido et al.
patent: 4839018 (1989-06-01), Yamada et al.
patent: 4851358 (1989-07-01), Huber
patent: 4879016 (1989-11-01), Joshi
patent: 4885142 (1989-12-01), Suitor et al.
patent: 4935118 (1990-06-01), Agarwal et al.
patent: 5167716 (1992-12-01), Boitnott et al.
patent: 5174043 (1992-12-01), Yen

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-593861

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.