Fishing – trapping – and vermin destroying
Patent
1991-02-20
1993-02-02
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437186, 437195, H01L 2126, H01L 21306
Patent
active
051837803
ABSTRACT:
In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact is irradiated with a high-energy beam through the dopant source. Consequently, the insulator film and the semiconductor film in the irradiated region are melted, to form a polycrystalline contact region having impurities supplied from the dopant source doped therein. Thus, the high-energy beam is irradiated to the region for electrical contact through the dopant source to form the polycrystalline contact region, thereby to make it possible to omit the patterning process such as etching processing for providing a contact hole.
REFERENCES:
patent: 4234356 (1980-11-01), Auston et al.
patent: 4400715 (1983-08-01), Barbee et al.
patent: 4542580 (1985-09-01), Delivorias
patent: 4651410 (1987-03-01), Feygenson
Optoelectronics Devices and Technologies, vol. 1, No. 2, pp. 235-248, Dec. 1989, entitled "The Transformation of a-Si:H Into Polycrystalline Silicon by Excimer Laser Irradiation and its Application to TFTs".
IBM Technical Disclosure, vol. 11, No. 2, Jul. 1968, Joshi et al. "Inducing Impurity Myration in Semiconductors by lasers."
Ishida Satoshi
Iwata Hiroshi
Nakayama Shoichiro
Noguchi Shigeru
Sano Keiichi
Chaudhuri Olik
Sanyo Electric Co,. Ltd.
Trinh Loc Q.
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