Method of fabricating self-aligned field-effect transistor havin

Details Method of fabricating self-aligned field-effect transistor havin Method of fabricating self-aligned field-effect transistor havin

1985-12-12

1987-07-14

Chaudhuri, Olik

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148DIG143, 357 15, 427 90, H01L 21283, H01L 21308

Patent

active

046793119

ABSTRACT:
A method of fabricating a self-aligned field-effect transistor having a T-shaped gate electrode and a sub-micron gate length. In the method of the present invention, a multi-layer gate structure is formed on an active region formed in a semiconductor substrate. A first aluminum layer of the gate structure, which is adjacent to the active region, is selectively etched to form a T-shaped gate electrode. The etching provides the first layer of the gate electrode with a gate length of less than 0.75 microns, and the T-shaped gate electrode is used as a shadow-mask to deposit self-aligned source and drain electrodes.

REFERENCES:
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4472872 (1984-09-01), Toyada et al.
patent: 4529686 (1985-07-01), Kraus

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