Method of fabricating self-aligned bipolar transistor process an

Details Method of fabricating self-aligned bipolar transistor process an Method of fabricating self-aligned bipolar transistor process an

1978-12-29

1981-05-26

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576W, 29578, 29580, 148 15, 148187, 156647, 156648, 156649, 156657, 357 49, 357 50, 357 55, 357 91, H01L 2120, H01L 21306

Patent

active

042696364

ABSTRACT:
A bipolar transistor process and device wherein the transistor is fabricated within a laterally isolated device region, into which is formed a lateral intradevice isolation groove prior to formation of device/active and contact regions. The lateral intradevice isolation groove with the lateral device isolation assists in self-alignment of device regions. The lateral intradevice isolation permits the simultaneous formation through a single mask of an active region and a contact region for a different active region both on the same planar surface of a semiconductor substrate and facilitates extremely close spacing of active regions at the planar surface.

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