Method of fabricating Schottky gate-type GaAs field effect trans

Details Method of fabricating Schottky gate-type GaAs field effect trans Method of fabricating Schottky gate-type GaAs field effect trans

1985-10-30

1987-10-20

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 41, 437175, H01L 21265

Patent

active

047004550

ABSTRACT:
A method of manufacturing a semiconductor device wherein an insulating film of silicon dioxide is provided on the sidewalls of a gate electrode. This silicon dioxide film is used to define the length of the gate region during formation of the source and drain regions by ion implantation, and to accurately position the gate electrode relative to the source and drain regions.

REFERENCES:
patent: 4503599 (1985-03-01), Ueyanagi et al.
patent: 4532004 (1985-07-01), Akiyama et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
Denshi Tsushin Gakkai Gijutsu Kenkyu Houkokusho, ED-83-98, Selfaligned Ohmic Contact Technology, S. Takahashi et al. (Hitachi, Ltd.), Jan. 24, 1984, pp. 31-36.

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