Fishing – trapping – and vermin destroying
Patent
1991-12-23
1993-07-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437179, 437 59, 437 51, 437178, 437904, 148DIG9, 148DIG139, H01L 21265
Patent
active
052253597
ABSTRACT:
A Schottky diode is formed with a layer of intrinsic polysilicon separating a metal silicide layer from an n conductivity type active region. This structure avoids the necessity for a process step which opens a window in the intrinsic polysilicon layer and reduces the portion of surface area needed for formation of a Schottky diode, compared to previous devices. The Schottky diode can be formed as part of an overall process for forming an integrated circuit and can be positioned in parallel across the collector/base junction of a bipolar transistor to form a Schottky barrier diode-clamped transistor.
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Hearn Brian E.
National Semiconductor Corporation
Nguyen Tuan
LandOfFree
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