Method of fabricating regions of a bipolar microwave integratabl

Details Method of fabricating regions of a bipolar microwave integratabl Method of fabricating regions of a bipolar microwave integratabl

1984-12-18

1987-03-24

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576C, 29576E, 148 15, 148175, 148187, H01L 21477

Patent

active

046514104

ABSTRACT:
A method of fabricating bipolar integratable transistors includes a recrystallization step. A monocrystalline epitaxial layer is deposited upon a highly doped substrate and impurities are introduced into a portion of the epitaxial layer to form a first transistor region. A polysilicon layer is deposited upon the surface and a portion of the polycrystalline layer is recrystallized wherein the first transistor region serves as a seed. Impurities are introduced into the recrystallized portion to form a base. An additional polysilicon layer is deposited over the substrate and a portion is recrystallized wherein the base serves as a seed. A second transistor region is formed in the recrystallized portion of the additional polysilicon layer.

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patent: 4546539 (1985-10-01), Beasom

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