Method of fabricating precisely matched polysilicon resistors

Fishing – trapping – and vermin destroying

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437 46, 437918, H01L 2172

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active

054242398

ABSTRACT:
A method of fabricating a resistor which comprises the steps of providing a semiconductor substrate, preferably silicon, forming a layer of oxide over the substrate, providing on the layer of oxide a region of material having a substantially higher resistance in the undoped state than in the doped state, preferably polysilicon, patterning a region over the material to expose predetermined regions of the material, doping the exposed regions of the material to a predetermined doping level substantially greater than the doping level of the original material, masking the doped regions and a portion of the previously unexposed regions of the material on spaced apart portions of the doped regions and etching away the exposed region of material external to the doped regions and external to the portion of the previously unexposed regions of the material on spaced apart portions of the doped regions.

REFERENCES:
patent: 4602421 (1986-07-01), Lee et al.
patent: 5196233 (1993-03-01), Chan et al.
Lane et al., "The Design of Thin-Film Polysilicon Resistors for Analog IC Applications", IEEE Trans. on Electron Devices, vol. 36, No. 4, pp. 738-744, Apr. 1989.

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