Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2005-04-26
2005-04-26
Chambliss, Alonzo (Department: 2814)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
Reexamination Certificate
active
06884661
ABSTRACT:
The present invention provides for attaching a Gallium Arsenide (GaAs) semiconductor die to a package using bumps formed over a metallic heat sink covering the output transistor area of the semiconductor die. In general, one or more bumps are formed on the metallic heat sink, thereby eliminating stress on the bumps caused by stress risers on the surface of the semiconductor die. In addition, the upper and lower surfaces of the bumps are substantially planar, thereby maximizing contact with the semiconductor die and the package and allowing maximum heat transfer. The planarization is due to the conforming contact surface of the solder. The combination of the bumps and the metallic heat sink provide an efficient way to reduce the thermal and electrical impedance of the die. In one embodiment, the bumps are substantially copper. In another embodiment, the bumps are substantially gold.
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H. Sato, M. Miyaúchi, M. Akagi, M. Hasegawa, J.K. Twynam, K. Yamamura, and T. Tomita, “Bump Heat Sink Technology—A Novel Assembly Technology Suitable for Power HBTs,” IEEE:GaAs IC Symposium, pp. 337-340, 1993.
Jorgenson Jon
Morris Thomas Scott
Shah Milind
Chambliss Alonzo
RF Micro Devices, Inc.
Withrow & Terranova , PLLC
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