Method of fabricating porous silicon carbide (SiC)

Details Method of fabricating porous silicon carbide (SiC) Method of fabricating porous silicon carbide (SiC)

1993-09-01

1995-10-03

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412955, 20412965, 20412975, C25F 312

Patent

active

054549159

ABSTRACT:
Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

REFERENCES:
patent: 3078219 (1963-02-01), Chang
patent: 3607448 (1971-09-01), Dunlap et al.
patent: 4069121 (1978-01-01), Baud
patent: 5277769 (1994-01-01), Medernach
patent: 5306647 (1994-04-01), Lehmann et al.

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