Method of fabricating polysilicon emitters for solar cells

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

136256, 357 30, 357 65, 437 4, 437186, H01L 3118

Patent

active

050574396

ABSTRACT:
Polysilicon contacts for silicon devices such as bipolar junction transistors and silicon solar cells are fabricated in a two step anneal process to improve contact resistance and emitter saturation current density. After a silicon oxide layer is formed on a surface of a silicon substrate, a plurality of openings are formed there through to expose a plurality of contact surfaces on the surface of the silicon substrate. A thin thermally grown silicon oxide layer is then formed on the contact surfaces after which an undoped layer of polysilicon material is formed over the silicon oxide layers. The structure is then annealed at approximately 1050.degree. C. to break the thermally grown silicon oxide layer. Thereafter, a first layer of doped glass is formed over the silicon oxide surface and selectively etched to remove the first layer of glass from a first group of contact surfaces. A second layer of doped glass is then formed over the first group of contact surfaces and over the first layer of doped glass. Thereafter, the silicon substrate is annealed at a temperature of approximately 900.degree. C. thereby driving in dopants from said first and second layers of glass into said polysilicon layer over said first and second groups of contact surfaces. Finally, the layers of glass are removed and the polysilicon layer is patterned to define first and second polysilicon contacts.

REFERENCES:
patent: 4403392 (1983-09-01), Oshima et al.
patent: 4502206 (1985-03-01), Schnable et al.
R. A. Sinton et al., IEEE Trans. Electron Dev., vol. ED-34, Oct. 1987, pp. 2116-2123.
Y. Kwark et al., Conference Record, 18th IEEE Photovoltaic Specialists Conf. (1985), pp. 787-791.
F. A. Lindholm et al., Conference Record, 18th IEEE Photovoltaic Conference (1985), pp. 1003-1007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of fabricating polysilicon emitters for solar cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating polysilicon emitters for solar cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating polysilicon emitters for solar cells will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-990601

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.