Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-03-21
1998-07-21
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257363, 257538, H01L 2976
Patent
active
057838437
ABSTRACT:
A method of fabricating a polycrystalline silicon thin-film transistor having two symmetrical lateral resistors is disclosed. Two sub-gates are formed along with a gate in the gate metal or polysilicon layer of the thin-film transistor. The two sub-gates that are located symmetrically on the two sides of the gate have equal distances to the gate. One sub-gate is near the drain of the thin film transistor and the other near the source. Two sections in the polycrystalline silicon layer of the thin film transistor are blocked by the two sub-gates and no impurity material is doped. The two undoped sections form the symmetrical lateral resistors of this invention. The lateral resistor near the drain decreases the electric field in the nearby depletion area when the thin-film transistor is switched off. The current leakage is reduced.
REFERENCES:
patent: 5250835 (1993-10-01), Izawa
Industrial Technology Research Institute
Prenty Mark V.
LandOfFree
Method of fabricating polycrystalline silicon thin-film transist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating polycrystalline silicon thin-film transist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating polycrystalline silicon thin-film transist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1649097