Method of fabricating polycrystalline silicon and switching...

Details Method of fabricating polycrystalline silicon and switching... Method of fabricating polycrystalline silicon and switching...

2007-02-20

2007-02-20

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257S002000, C257S059000

Reexamination Certificate

active

10848048

ABSTRACT:
A method of fabricating polycrystalline silicon includes: forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.

REFERENCES:
patent: 5696003 (1997-12-01), Makita et al.
patent: 5940690 (1999-08-01), Kusumoto et al.
patent: 6322625 (2001-11-01), Im
patent: 6368945 (2002-04-01), Im
patent: 6545730 (2003-04-01), Hwang
patent: 6803975 (2004-10-01), Kim et al.
patent: 6833883 (2004-12-01), Park et al.
patent: 2003/0020851 (2003-01-01), Kim et al.
patent: 2003/0068836 (2003-04-01), Hongo et al.
patent: 2003/0199176 (2003-10-01), Adachi et al.
patent: 2004/0011772 (2004-01-01), Okumura
patent: 2004/0072411 (2004-04-01), Azami et al.
patent: 1 122 561 (2001-08-01), None
patent: 2000-349290 (2000-12-01), None
patent: 2001-083521 (2001-03-01), None
patent: WO 03/023878 (2003-03-01), None
Robert S. Sposilli et al.; Material Research Society; vol. 452, 1997; pp. 956-957.

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