Method of fabricating polycrystalline selenium imaging devices

Details Method of fabricating polycrystalline selenium imaging devices Method of fabricating polycrystalline selenium imaging devices

1975-09-15

1977-05-03

Padgett, Benjamin R.

Compositions

Electrically conductive or emissive compositions

Light sensitive

96 15, 313386, 427 74, 427 76, 252512, 252518, H01L 3100

Patent

active

040213757

ABSTRACT:
A photoconductive target for a vidicon-type camera tube, which includes a layer of polycrystalline selenium, is exposed to a diffusion cycle wherein the temperature is gradually increased from an initial baking temperature of about 50.degree. C. to a final baking temperature of about 150.degree. C. at a rate of about 5.degree. C. per minute. Thereafter the target is baked at a temperature of about 100.degree. C. for about 16 hours in oxygen to substantially reduce the dark current of the target.

REFERENCES:
patent: 2833675 (1958-05-01), Weimer
patent: 2887411 (1959-05-01), Hoppe et al.
patent: 3020442 (1962-02-01), Nicholson et al.
patent: 3310700 (1967-03-01), Dresner et al.
patent: 3350595 (1967-10-01), Kramer
patent: 3901703 (1975-08-01), Baum

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