Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2011-07-19
2011-07-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C438S104000, C438S149000, C438S164000, C438S162000, C257S059000, C257SE27111, C257SE29094
Reexamination Certificate
active
07981708
ABSTRACT:
A method of fabricating a pixel structure is provided. A gate electrode is formed on a substrate, and a dielectric layer is formed on the gate electrode. A patterned metal oxide semiconductor layer and a patterned metallic etching stop layer are formed on the dielectric layer above the gate electrode. A first conductive layer is formed to cover the patterned metallic etching stop layer and the dielectric layer. The first conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a source and a drain. A second conductive layer is formed to cover the source, the drain and the dielectric layer. The second conductive layer is patterned by using the patterned metallic etching stop layer as an etching stop layer to form a first electrode layer. The patterned metallic etching stop layer exposed between the source and the drain is removed.
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Chen Chia-Yu
Lee Liu-Chung
Ting Hung-Che
Au Optronics Corporation
Baptiste Wilner Jean
Jianq Chyun IP Office
Smith Matthew
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