Method of fabricating piezoelectric thin film

Details Method of fabricating piezoelectric thin film Method of fabricating piezoelectric thin film

1979-02-15

1980-11-11

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

252 629, C23C 1500

Patent

active

042331358

ABSTRACT:
In a method of fabricating a piezoelectric thin film of zinc oxide by means of a sputtering process, zinc and alkaline earth metal are sputtered together in an oxygen atmosphere to thereby produce zinc oxide containing the alkaline earth metal.

REFERENCES:
patent: 3409464 (1968-11-01), Shiozawa
patent: 3566185 (1971-02-01), Gavin
patent: 3766041 (1973-10-01), Wasa et al.
patent: 4139678 (1979-02-01), Ogawa et al.
Toshio Hada, Structures and Electrical Properties of Zno Films prepared by Low Pressure Sputtering Systems, Thin Solid Films, vol. 7, No. 2, (1971), pp. 135-145.
B. T. Khuri-Yakub et al.; Studies of the Optimum Conditions for Growth of RF-Sputtered Zn0 Films; Journal of Applied Physics, vol. 46, No. 8, (8/1975), pp. 3266-3272.

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