Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2009-04-17
2010-11-02
Prenty, Mark (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE21097
Reexamination Certificate
active
07824942
ABSTRACT:
A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.
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Chan Shih Hsiung
Hsu Chih Peng
Huang Shih Cheng
Lin Wen Yu
Tu Po Min
Advanced Optoelectronic Technology Inc.
Chew Raymond J.
Prenty Mark
Zhanjing Technology (Shen Zhen) Inc.
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