Method of fabricating photoelectric conversion device having at

Details Method of fabricating photoelectric conversion device having at Method of fabricating photoelectric conversion device having at

1998-01-22

1999-11-16

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 57, 438 73, 438900, 438936, H01L 2120

Patent

active

059856890

ABSTRACT:
A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.

REFERENCES:
patent: 4476477 (1984-10-01), Capasso et al.
patent: 4613382 (1986-09-01), Katayama et al.
patent: 4936781 (1990-06-01), Micrea et al.
patent: 5155351 (1992-10-01), Yamanobe et al.
patent: 5179029 (1993-01-01), Gottscho et al.
patent: 5194398 (1993-03-01), Miyachi eta l.
patent: 5214002 (1993-05-01), Hayashi et al.
patent: 5336623 (1994-08-01), Sichanugrist et al.
G.F. Williams et al., "The graded bandgap multilayer avalanche photodiode: a new low-noise detector", IEEE Electron Device Letters EDL-3 No. 3, pp. 71-73, Mar. 1982.
IEEE Electron Device Letters, vol. EDL-3, No. 3, Mar. 1982, pp. 71-73, G.F. Williams et al., "The Graded Bandgap Multilayer Avalanche Photodiode: A New Low-Noise Detector".

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