Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1994-09-16
1995-05-23
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430312, 430313, 430314, 430324, 430326, G03F 900
Patent
active
054180953
ABSTRACT:
A method of fabricating phase shifters with absorbing or attenuating sidewalls in order to inhibit or prevent light scattering at quartz-air interfaces. A quartz substrate is patterned and trenches are formed to provide "shifters". A metal film layer is formed along sidewalls of the trenches to provide the light absorbing characteristics. In one technique, the conformal metal layer is anisotropically etched while in another the metal layer is removed along with the photoresist by a lift-off technique.
REFERENCES:
patent: 3604778 (1971-09-01), Burckhardt
patent: 4013338 (1977-03-01), Sato et al.
patent: 4037918 (1977-07-01), Kato
patent: 4068018 (1978-01-01), Hashimoto et al.
patent: 4119483 (1978-10-01), Hubsch et al.
patent: 4174219 (1979-11-01), Andres et al.
patent: 4248948 (1981-02-01), Matsuda
patent: 4360586 (1982-11-01), Flanders et al.
patent: 4374911 (1983-02-01), Hartley
patent: 4377627 (1983-03-01), Vinton
patent: 4402600 (1983-09-01), Araihara
patent: 4411972 (1983-10-01), Narken et al.
patent: 4417317 (1983-11-01), Culp et al.
patent: 4434224 (1984-02-01), Yoshikawa et al.
patent: 4440840 (1984-04-01), Yamaguchi
patent: 4529686 (1985-07-01), Kraus
patent: 4575399 (1986-03-01), Tanaka et al.
patent: 4686162 (1987-08-01), Stangl et al.
patent: 4806442 (1989-02-01), Shirasaki et al.
patent: 4806454 (1989-02-01), Yoshida et al.
patent: 4842969 (1989-06-01), Kawatsuki et al.
patent: 4852973 (1989-08-01), Durnin et al.
patent: 4871630 (1989-10-01), Giammarco et al.
patent: 4881257 (1989-11-01), Nakagawa
patent: 4885231 (1989-12-01), Chan
patent: 4890309 (1989-12-01), Smith et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 4935334 (1990-06-01), Boettiger et al.
patent: 4939052 (1990-07-01), Nakagawa
patent: 4997747 (1991-03-01), Yoshida et al.
patent: 5024726 (1991-06-01), Fujiwara
patent: 5045417 (1991-09-01), Okamoto
patent: 5079113 (1992-01-01), Ohta et al.
patent: 5153083 (1992-10-01), Garofalo et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5219686 (1993-06-01), Kamon
patent: 5225035 (1993-07-01), Rolfson
patent: 5229230 (1993-07-01), Kamon
Patent Abstracts of Japan, vol. 17, No. 257, (E-1368) May 20, 1993, & JP,A,05 003 146 (Hitachi Ltd.) 8 Jan. 1993.
IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, N.Y., US, p. 1328, `Method to Produce Sizes in Openings in Photo Images Smaller than Lithographic Minimum Size`.
Patent Abstracts of Japan, vol. 16, No. 382 (P-14382) Aug. 14, 1992 & JP,A,04 123 060 (Fujitsu Ltd) 23 Apr. 1992 see abstract.
IBM Technical Disclosure Bulletin, vol. 25, No. 12, May 1983, NY US, pp. 6408-6414, `Optical Recording Disc Ssytem and Memory Medium,` p. 6408.
International Conference on Macrolithography, Rome, Italy, 17-19 Sep. 1991, 79-85 ISSN 0167-9317, pp. 79-86, Lin BJ `The optimum numerical aperture for attenuated phase-shifting masks`.
"Four More Significant Japanese Advances in Phase Shifting Technology," Semiconductor International, Dec. 1991, p. 16.
"Improved resolution of an i-line stepper using a phase-shifting mask," Tsuneo Terasawa et al., J. Vac. Sci. Technol. B 8(6) Nov./Dec. 1990, pp. 1300-1308.
"Fabrication of 64M Dram with i-Line Phase-Shift Lithography," K. Nakagawa et al., IEEE, Apr. 1990, pp. 817-820.
"Conjugate Twin-Shifter for the New Phase Shift Method to High Resolution Lithography," H. Ohtsuka et al., SPIE, vol. 1463, Optical/Laser Microlithography IV (1991), pp. 112-123.
"Exploration of Fabrication Techniques for Phase-Shifting Masks", A. K. Pfau et al., SPIE, vol. 1463, Optical/Laser Microlithography IV (1991), pp. 124-134.
"Transparent phase shifting mask with multistage phase shifter and comb-shaped shifter," Hisashi Watanabe et al., SPIE, vol. 1463, Optical/Laser Macrolithography IV (1991), pp. 101-110.
"Phase-Shifting Mask and FLEX Method for Advanced Photo-lithography," Hiroshi Fukuda et al., SPIE, vol. 1264, Optical/Laser Microlithography III (1990), pp. 14-25.
"New Phase Shifting Mask with Self-aligned Phase Shifers for a Quarter Micron Photolithography," Akihiro Nitayama et al., IEEE, Jul. 1989, pp. 57-60.
"The Phase-Shifting Mask II: Imaging Simulations & Submicrometer Resist Exposures," Marc D. Levenson et al., IEEE, vol. ED-31, No. 6, Jun. 1984, pp. 753-763.
"New phase-shifting mask with highly transparent SiO2 phase shifters," Isamu Hanyu et al., SPIE vol. 1264 Optical/Laser Microlithography III (1990), pp. 167-177.
"Transparent Phase Shifting Mask," H. Watanabe et al., IEEE, Apr. 1990, pp. 821-824.
"A 5.9 .mu.m.sup.2 Super Low Power SRAM Cell Using a New Phase-Shift Lithography," T. Yamanaka et al., IEEE, Apr. 1990, pp. 477-480.
"Phase-Shift Mask Utilizing Silicon Oxy-Nitride as a Low Reflectivity Phase-Shift Layer," IBM Technical Disclosure Bulletin, vol. 34, No. 10B, Mar. 1992, pp. 360-361.
"Bilayer Metallic Antireflection Mirror," IBM Technical Disclosure Bulletin, vol,. 25, No. 1, Jun. 1982, pp. 48-50.
Patent Abstracts of Japan, Publication No. JP060637, Feb. 26, 1992, App. No. JP900172150, vol. 16, No. 252, Kitano Naoki, "Phase Shift Mask and Production Thereof".
"The Attenuated Phase-Shifting Mask," Burn J. Lin, Solid State Technology Jan. 1992, pp. 43-47.
"Fabrication of phase-shifting masks with shifter overcoat," R. L. Kostelak et al., 8257b Journal of Vacuum Science & Technology, B, 9(1991) Nov.,/Dec., No. 6, New York, US, pp. 3150-3154.
"Edge Effects in Phase-shifting Masks for 0.25 um Lithography," Alfred K. Wong and Andrew R. Neureuther, SPIE, vol. 1809, Aug. 1993, pp. 222-228.
"Phase Shift Masking Traced to 1976 Patent", Semiconductor International, Jun. 1993, pp. 32-34.
"Improving Resolution in Photolithography with a Phase-Shifting Mask", Marc D. Levenson et al., IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.
"0.2.mu.m or Less I-Line By Phase-Shifting-Mask Technology", Hideyuki Jinbo and Yoshio Yamashita, Semiconductor Technology Lab, Oki Electric Industry Co., Japan, IEDM 90 (1990) pp. 825-828.
"Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist", Hideyki Jinbo et al., Japanese Journal of Applied Physics, vol. 28, No. 10, Oct., 1989, pp. 2053-2057.
"Subhalf-micron patterning of negative working resist by using new phase-shifting masks", Hideyuki Jinbo et al., Journal of Vacuum Science & Technology B, Second Series, vol. 8, No. 6, Nov./Dec. 1990, pp. 1745-1748.
"0.3-micron optical lithography using a phase-shifting mask", Tsuneo Terasawa et al., SPIE, vol. 1088 Optical/Laser Microlithography II (1989), pp. 25-32.
"What is a Phase-Shifting Mask?", Marc D. Levenson, SPIE, vol. 1496, 10th Annual Symposium on Microlithography (1990), pp. 20-26.
"Phase-Shifting and Other Challenges in Optical Mask Technology", Burn J. Lin, SPIE, vol. 1496, 10th Annual Symposium on Microlithography (1990) pp. 54-79.
"Modeling Phase Shifting Masks", Andrew R. Neureuther, SPIE, vol. 1496, 10th Symposium on Microlithography (1990), pp. 80-88.
"New phase-shifting mask with highly transparent SiO.sub.2 phase shifters," I. Hanyu et al., SPIE Proceedings, vol., 1264, p. 167, 1990.
"New Phase Shfiting Mask with Self-aligned Phase Shifters for a Quarter Micron Photolithography," IEEE, A. Nitayama et al., IEDM Proceedings, IEDM-89, pp. 57-60, 1989.
"The Optimum Numerical Aperature for Optical Projection Microlithography" B. J. Lin et al., SPIE Proceedings, vol. 1463, pp. 42-53, 1991.
"The optimum numerical aperature for attenuated phase-shifting masks," B. J. Lin, Microelectronic Engineering 17 (1992) pp. 79-86.
"A critical examination of submicron optical lithography using simulated project images," Alan E. Rosenbluth et al., J. Vac. Sci. Technol. B1(4) Oct.-Dec. 1983, pp. 1190-1195.
Low Kah K.
Vasudev Prahalad K.
Kidd William W.
Motorola Inc.
Rosasco S.
Sematech Inc.
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