Method of fabricating phase shift reticles including chemically

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, 430269, 430311, 430396, G03F 900

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051943441

ABSTRACT:
A method of fabricating phase shifting reticles that can be used as a mask in photolithographic processes such as semiconductor wafer patterning. An opaque film such as chromium is first deposited on a transparent substrate. The opaque film is then patterned with openings by a first photolithographic step. A phase shifter material such as (SiO.sub.2) is then deposited into the openings to form phase shifter sections. The phase shifter sections are then polished by chemical mechanical planarization (CMP) to a thickness "T" which is selected to produce a 180.degree. phase shift. A pattern of light apertures is then formed by a second photolithographic process in the opaque film such that a reticle having a repetitive phase shifting pattern is formed.

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