Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-10-31
1981-04-14
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148174, 156610, 156612, 357 4, 357 16, 357 17, 357 18, H01L 21203, H01L 2938
Patent
active
042617715
ABSTRACT:
Suitably modified molecular beam epitaxy (MBF) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs).sub.n (AlAs).sub.m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al.sub.x Ga.sub.1-x As).sub.n (Ge.sub.2).sub.m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.
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Dingle Raymond
Gossard Arthur C.
Petroff Pierre M.
Wiegmann William
Bell Telephone Laboratories Incorporated
Dean R.
Saba W. G.
Urbano Michael J.
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