Method of fabricating patterned epitaxial silicon films utilizin

Details Method of fabricating patterned epitaxial silicon films utilizin Method of fabricating patterned epitaxial silicon films utilizin

1989-06-12

1992-07-28

Saba, William G.

Fishing, trapping, and vermin destroying

148DIG26, 148DIG50, 148DIG51, 148DIG131, 437 64, 437 89, 437 90, 437944, H01L 21203

Patent

active

051340909

ABSTRACT:
A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature within the range between 400 degrees C. and 700 degrees C. and the polycrystalline material that forms is removed.

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