Method of fabricating passivation layer in liquid crystal displa

Details Method of fabricating passivation layer in liquid crystal displa Method of fabricating passivation layer in liquid crystal displa

1999-05-21

2000-09-19

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 216 79, 216 88, 216 23, 438720, 438723, 438734, H01L 2100

Patent

active

061211516

ABSTRACT:
A method for fabricating a passivation layer. An isolation layer is formed on a metal layer over the substrate. The isolation layer on the metal layer is removed by chemical-mechanical polishing and dry etching. The planarization of the metal layer thus is obtained. A passivation layer having a certain structure and a thickness combination of different layers is formed over the substrate. The reflection rate of the metal layer is significantly enhanced.

REFERENCES:
patent: 6008112 (1999-12-01), Acocella et al.
patent: 6017821 (2000-01-01), Yang et al.

Affiliated with

Also associated with

Rating

Method of fabricating passivation layer in liquid crystal displa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating passivation layer in liquid crystal displa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating passivation layer in liquid crystal displa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072721