Method of fabricating passivated tunnel oxide

Details Method of fabricating passivated tunnel oxide Method of fabricating passivated tunnel oxide

1988-04-29

1990-01-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 43, 437 49, 437 52, 437238, 437243, 4272553, H01L 21316

Patent

active

048943533

ABSTRACT:
A method of fabricating a high-quality tunnel oxide layer includes a two-step oxidation process. The first oxidation step includes oxidizing a substrate in an atmosphere comprising oxygen and nitrogen at a temperature of approximately 950.degree. C., and thus is an HCl-less oxidation. The second oxidation step is performed in an atmosphere comprising HCl and argon at a temperature of approximately 1050.degree. C. The first oxidation step is performed at a temperature in the range of temperatures for the viscous flow of the oxide to prevent any physical defects from forming in the oxide layer. The second oxidation step is performed at a temperature sufficient to passivate any mobile ions in the oxide layer in at atmosphere comprising a gettering agent, for example, HCl. By this two-step oxidation process a tunnel oxide layer which is of high quality and is not damaged during subsequent processing steps performed at temperatures at 1100.degree. C. and above.

REFERENCES:
patent: 4139658 (1979-02-01), Cohen et al.
patent: 4377605 (1983-03-01), Yamamoto
patent: 4518630 (1985-05-01), Grasser
patent: 4551910 (1985-11-01), Patterson
patent: 4567061 (1986-01-01), Hayashi et al.
patent: 4775642 (1988-10-01), Chang et al.
patent: 4784975 (1988-11-01), Hofmann et al.
Steinberg, "Dual HCl Thin Gate Oxidation Process", J. Electrochem. Soc., vol. 129, No. 8, Aug. 1982, pp. 1778-1782.
Bhattacharyya et al., "A Two-Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides", J. Electrochem. Soc., vol. 132, No. 8, Aug. 1985, pp. 1900-1903.
Hashimoto et al., "A Method of Forming Thin and Highly Reliable Gate Oxides", J. Electrochem. Soc., vol. 127, No. 1, Jan. 1980, pp. 129-135.
Singh et al., "Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds", J. Electrochem. Soc., vol. 125, No. 3, Mar. 1978, pp. 453-461.
Cohen, "Electrical Properties of Post-Annealed Thin SiO.sub.2 Films", J. Electrochem. Soc., vol. 130, No. 4, Apr. 1983, pp. 929-932.
Solomon, "Breakdown in Silicon Oxide--A Review", J. Vac. Sci. Technol., vol. 14, No. 5, Sep./Oct. 1977, pp. 1122-1130.
Roda et al., "A Simplified Viscoelastic Model for the Thermal Growth of Thin SiO.sub.2 Films", J. Electrochem. Soc., vol. 132, No. 8, Aug. 1985, pp. 1909-1913.
Faraone et al., "Surface Roughness and Electrical Conduction of Oxide/Polysilicon Interfaces", J. Electrochem. Soc., vol. 133, No. 7, Jul. 1986, pp. 1410-1413.

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