Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
2000-02-15
2000-11-21
Bowers, Charles
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
365145, H01L 2100
Patent
active
061501840
ABSTRACT:
A ferroelectric capacitor includes a bottom electrode, a top electrode, an a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance. The encapsulation technique can also be used to improve the performance of ferroelectric transistors and other devices.
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Argos, Jr. George
Evans Thomas A.
Bowers Charles
Burton, Esq. Carol W.
Meza, Esq. Peter J.
Ramtron International Corporation
Thompson Craig
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