Fishing – trapping – and vermin destroying
Patent
1991-06-05
1992-08-11
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 26, 437 30, 437150, 437959, 148DIG58, H01L 21265, H01L 2174
Patent
active
051378388
ABSTRACT:
A P-type buried layer is described for use with planar, silicon, monolithic, epitaxial, PN junction-isolated transistors of PNP conductivity primarily for use in IC construction. The buried layer includes a high concentration of boron and gallium along with germanium, which is in sufficient concentration to inhibit impurity diffusion in the silicon epitaxial layer. This inhibition effect has been found to be sufficient to cause the combination of boron and gallium to act as slow diffusers. The result is that the performance of arsenic and antimony, in the creation of buried layers for NPN transistors. Thus, the performance of NPN transistors can be matched for PNP transistors. This means that an IC can be fabricated so that more nearly equal performance NPN and PNP transistors can be fabricated simultaneously in a common substrate.
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Fair, R. B., "Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emitters", J. Appl. Phys., vol. 44, No. 1, pp. 283-291, Jan. 1973.
Aronowitz Sheldon
Ramde Amolak
Chaudhari C.
Hearn Brian E.
National Semiconductor Corporation
Rappaport Irving S.
Rose James W.
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