Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Patent
1999-04-29
2000-12-12
Pham, Long
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
438 23, 438 33, 438 39, 438 46, H01L 2100
Patent
active
061597600
ABSTRACT:
A method of fabricating oxide-apertured vertical cavity surface emitting lasers involving the steps of: i) defining, during the fabrication of one or more VCSELs on an electronic chip, a number of mesa structures of different sizes; ii) selectively oxidizing the chip and mesa structures to produce an oxide-aperture for each structure; iii) inspecting the chip to determine which one of the mesas is desired or optimal; iv) choosing an appropriate metalization mask that serves to metalize and electrically connect only that desired mesa structure; and v) depositing, a dielectric top mirror on that electrically connected mesa. Advantageously, the method may be practiced using a variety of fabrication techniques and apparatus that are compatible with conventional devices. A distinguishing characteristic of our inventive method, is that only a desired or optimal mesa is completed while the remaining mesas on a particular chip remain unprocessed.
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K. D. Choquette et al., "Vertical-Cavity Surface-Emitting Laser Diodes Fabricated by In Situ Dry Etching and Molecular Beam Epitaxial Regrowth," IEEE Photonics Technology Letters, vol. 5, No. 3, pp. 284-287 (1993).
D. L. Huffaker et al., "Sub-40 .mu.A Continuous-Wave Lasing in an Oxidized Vertical-Cavity Surface-Emitting Laser with Dielectric Mirrors", IEEE Photonics Technology Letters, vol. 8, No. 8, pp. 974-976 (Aug. 1996).
Goossen Keith Wayne
Nuss Martin C.
Brosemer Jeffery J.
Lucent Technologies - Inc.
Pham Long
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