Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2007-11-06
2007-11-06
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S092000, C117S095000, C117S103000
Reexamination Certificate
active
11113760
ABSTRACT:
A method of fabricating an orientation film for a liquid crystal display device is provided. An orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generation element is provided. The substrate is placed on a stage in a vacuum chamber. The angle of the substrate is controlled such that the orientation film has a predetermined angle with respect to an ion beam of the ion-beam irradiation apparatus. An ion beam from the ion-beam irradiation apparatus irradiates a surface of the orientation film. The ion beam has an energy intensity of about 300 eV to about 800 eV and a predetermined dose.
REFERENCES:
patent: 5770826 (1998-06-01), Chaudhari et al.
patent: 10-1999-0057123 (1999-07-01), None
Office Action dated Dec. 14, 2005 for corresponding Korean Application No. 10-2004-0028572.
Brinks Hofer Gilson & Lione
Hiteshew Felisa
LG. Philips LCD Co. Ltd.
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