Method of fabricating orientation film for crystal display...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S092000, C117S095000, C117S101000

Reexamination Certificate

active

11113704

ABSTRACT:
A method of fabricating an orientation film for a liquid crystal display device is provided. The orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generator and a vacuum chamber having a stage on which the substrate is disposed are provided. The chamber is evacuated and an angle of the substrate having the orientation film is controlled such that the orientation film has a predetermined angle with respect to an ion beam of the ion-beam irradiation apparatus using the ion generator or the stage. The surface of the orientation film is irradiated by the ion beam. The ion beam has a predetermined intensity and dose. The substrate is subsequently heated at a predetermined temperature and time sufficient to harden a thermal polymerization functional group of the orientation layer.

REFERENCES:
patent: 5770826 (1998-06-01), Chaudhari et al.
patent: 1999-0051815 (1999-07-01), None
patent: 1999-0057123 (1999-07-01), None
Office Action dated Dec. 16, 2005 for corresponding Korean Application No. 10-2004-0028573.

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