Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-10-30
2007-10-30
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S095000, C117S101000
Reexamination Certificate
active
11113704
ABSTRACT:
A method of fabricating an orientation film for a liquid crystal display device is provided. The orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generator and a vacuum chamber having a stage on which the substrate is disposed are provided. The chamber is evacuated and an angle of the substrate having the orientation film is controlled such that the orientation film has a predetermined angle with respect to an ion beam of the ion-beam irradiation apparatus using the ion generator or the stage. The surface of the orientation film is irradiated by the ion beam. The ion beam has a predetermined intensity and dose. The substrate is subsequently heated at a predetermined temperature and time sufficient to harden a thermal polymerization functional group of the orientation layer.
REFERENCES:
patent: 5770826 (1998-06-01), Chaudhari et al.
patent: 1999-0051815 (1999-07-01), None
patent: 1999-0057123 (1999-07-01), None
Office Action dated Dec. 16, 2005 for corresponding Korean Application No. 10-2004-0028573.
Brinks & Hofer
Gilson & Lione
Hiteshew Felisa
LG. Philips LCD Co. Ltd.
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