Method of fabricating organic field effect transistors

Details Method of fabricating organic field effect transistors Method of fabricating organic field effect transistors

2005-06-14

2005-06-14

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S197000, C438S158000

Reexamination Certificate

active

06905908

ABSTRACT:
Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

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