Method of fabricating opto-electronic device

Details Method of fabricating opto-electronic device Method of fabricating opto-electronic device

1996-06-27

1998-07-07

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

438 47, H01L 2100

Patent

active

057767939

ABSTRACT:
A method of fabricating opto-electronic device includes steps of introducing a first reacting gas flow, a second reacting gas flow and (a) dopant(s) into a reactor to form epilayer(s) on a substrate wherein the ratio of the first reacting gas and the second reacting gas is different in each reacting stages. By providing suitable epilayer growth conditions which need neither expensive equipment nor highly technical steps, high quality doped ZnSe can be obtained and fabricating pure blue light light-emitting diode becomes possible.

REFERENCES:
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patent: 5150191 (1992-09-01), Montegi et al.
patent: 5278856 (1994-01-01), Migita et al.
patent: 5306662 (1994-04-01), Nakamura et al.
Taskar et al., "Novel technique for p-type nitrogen doped ZnSe epitaxial layers," Appl. Phys. Lett., vol. 62, No. 3., pp. 270-272, Jan. 18, 1993.
Morimoto et al., "Nitrogen radical doping during metalorganic vapor phase epitaxy of ZnSe," Appl. Phys. Lett., vol. 63, No. 17., pp. 2384-2386, Oct. 25, 1993.
Stutius, "Conduction mechanism in low-resistivity n-type ZnSe prepared by organometallic chemical vapor deposition," J. Appl. Phys., vol. 53, No. 1., pp. 284-291, Jan. 1, 1982.
Hauksson et al., "Compensation processes in nitrogen doped ZnSe," Appl. Phys. Lett., vol. 61, No. 18., pp. 2208-2210, Nov. 2, 1992.

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