Method of fabricating optical waveguides by ion implantation dop

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427162, 20419231, 350 9612, B05D 306, C23C 1400

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048408166

ABSTRACT:
A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

REFERENCES:
patent: 4166669 (1979-09-01), Leoberger et al.
patent: 4348074 (1982-09-01), Burns et al.
patent: 4400052 (1983-08-01), Alferness et al.
patent: 4445759 (1984-05-01), Valette
patent: 4709978 (1987-12-01), Jackel
B. R. Appleton et al., "Ion Beam Process of LiNbO.sub.3," Journal Materials Research 1(1), Jan/Feb 1986, pp. 104-113.
Ch. Buchal et al., "solid-Phase Epitaxy of Ion-Implanted LiNbO.sub.3 for Optical Waveguide Fabrication" Journal Materials Research, 2(2), Mar./Apr. 1987, pp. 222-230.
Ch. Buchal et al., "Advanced Ti-Implanted Optical Waveguides in LiNbO.sub.3," Materials Research Soc. Symp. Proc., vol. 88, 1987, pp. 93-99.
R. V. Schmidt et al., "Metal-Diffused Optical Waveguides in LiNbO.sub.3," Applied Physics Letters, vol. 25, No. 8, Oct. 15, 1974, pp. 458-460.
R. C. Alferness, "Optical Guided-Wave Devices," Science, vol. 234, Nov. 14, 1986, pp. 825-829.
R. L. Holman et al., "Battelle's Proposed Cooperative Program to Develop Guided Wave Optoelectronic Manufacturing Technology," Optical Engineering, vol. 24, No. 2, Mar./Apr. 1985, pp. 251-255.
Ghandh.-"VLSI Fabrication Principles" John Wiley & Sons, New York (1983) pp. 325-326.
Sze, "VLSI Technology" McGraw-Hill Book Company, New York (1983) pp. 150-151, pp. 242-253.

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